Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes

标题
Junction temperature in n-ZnO nanorods/(p-4H–SiC, p-GaN, and p-Si) heterojunction light emitting diodes
作者
关键词
-
出版物
SOLID-STATE ELECTRONICS
Volume 54, Issue 5, Pages 536-540
出版商
Elsevier BV
发表日期
2010-02-22
DOI
10.1016/j.sse.2010.01.020

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