期刊
SOLID-STATE ELECTRONICS
卷 54, 期 12, 页码 1582-1585出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.07.015
关键词
Nanostructures; Heterojunction diode; Nanofabrication
资金
- MKE/IITA [2008-F-023-01]
- MKE/KEIT [10030559]
Vertical aligned p-Si nanowires were fabricated by electroless wet chemical etching of Si wafer p-Si nanowires/ZnO thin film heterojunction diode was fabricated by depositing ZnO thin film on vertically aligned p-Si nanowire arrays Optical studies revealed that the Si nanowire surface has porous silicon like structure The junction properties were evaluated by measuring I-V and C-V characteristics I-V characteristics exhibited well defined rectifying behavior with a turn on voltage of 2 26 V and ideality factor of 45 (C) 2010 Elsevier Ltd All rights reserved
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