4.4 Article

Stable p-type ZnO films dual-doped with silver and nitrogen

期刊

SOLID STATE COMMUNICATIONS
卷 157, 期 -, 页码 45-48

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.12.029

关键词

ZnO; Semiconductor; Dual-doping; p-Type

资金

  1. National Natural Science Foundation of China [51102023]
  2. Special Fund for Basic Scientific Research of Central Colleges [CHD2011ZD012, CHD2012ZD003]

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Ag-N dual-acceptors doped p-type ZnO films were grown on glass substrates by the sol-gel method. The influence of dual-doping on the structural, electrical, and optical properties of samples was investigated in detail. The p-type conductivity of ZnO:(Ag,N) film is long-time stable. The resistivity of dual-doped ZnO:(Ag,N) film is much lower than that of mono-doped ZnO:Ag and ZnO:N films. ZnO homostructural p-n junction was fabricated by depositing an n-type ZnO layer on a p-type ZnO:(Ag,N) layer. The current-voltage characteristics show typical rectifying behaviors. Moreover, the ZnO:(Ag,N) film exhibits a good c-axis orientation, a high transmittance in the visible region, and a strong ultraviolet emission at room temperature. (c) 2013 Elsevier Ltd. All rights reserved.

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