期刊
SOLID STATE COMMUNICATIONS
卷 157, 期 -, 页码 45-48出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.12.029
关键词
ZnO; Semiconductor; Dual-doping; p-Type
资金
- National Natural Science Foundation of China [51102023]
- Special Fund for Basic Scientific Research of Central Colleges [CHD2011ZD012, CHD2012ZD003]
Ag-N dual-acceptors doped p-type ZnO films were grown on glass substrates by the sol-gel method. The influence of dual-doping on the structural, electrical, and optical properties of samples was investigated in detail. The p-type conductivity of ZnO:(Ag,N) film is long-time stable. The resistivity of dual-doped ZnO:(Ag,N) film is much lower than that of mono-doped ZnO:Ag and ZnO:N films. ZnO homostructural p-n junction was fabricated by depositing an n-type ZnO layer on a p-type ZnO:(Ag,N) layer. The current-voltage characteristics show typical rectifying behaviors. Moreover, the ZnO:(Ag,N) film exhibits a good c-axis orientation, a high transmittance in the visible region, and a strong ultraviolet emission at room temperature. (c) 2013 Elsevier Ltd. All rights reserved.
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