期刊
SOLID STATE COMMUNICATIONS
卷 151, 期 16, 页码 1094-1099出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.05.020
关键词
Graphene; Quantum Hall effect; Photochemical gate; Metrology
资金
- Engineering and Physical Sciences Research Council [EP/I500510/1] Funding Source: researchfish
- EPSRC [EP/I500510/1] Funding Source: UKRI
Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.
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