期刊
SOLID STATE COMMUNICATIONS
卷 151, 期 6, 页码 436-439出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.01.003
关键词
Semiconductors; Epitaxy; Impurities in semiconductors; Electron transport
资金
- Alexander von Humboldt Foundation
We have performed Hall effect measurements on Co2FeSi/(Al, Ga)As spin light emitting diodes and have found unique field dependencies that differ strongly from the expected behaviors for both the ferromagnetic Co2FeSi layer and the underlying semiconductor structure. To understand such unique field dependencies, we have developed a multi-channel transport model for parallel transport through a ferromagnet and a semiconductor. By applying this model to our data for the Hall and sheet resistance, we extract values for the carrier density and mobility in the semiconductor layer. We find that these values decrease with increasing growth temperature of the Co2FeSi layer, presumably due to stronger in-diffusion of Co and Fe impurities, which compensate the n-type dopants in the underlying n-(Al, Ga) As layer. Despite such compensation, spin-LEDs with the Co2FeSi layer grown at the relatively high temperature of 280 degrees C exhibit the highest spin injection efficiencies of more than 50%, hence calling into question the requirement of electron tunneling through the ferromagnet/semiconductor Schottky barrier for efficient spin injection. (C) 2011 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据