期刊
SOLID STATE COMMUNICATIONS
卷 150, 期 35-36, 页码 1660-1664出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2010.06.030
关键词
Magnetic semiconductor; Thin films; Laser irradiation; Oxygen and zinc vacancies
资金
- Army Research Office [W911NF-04-D-0003]
- National Science Foundation [NSF 0653722]
We have introduced systematic changes in the electrical, magnetic and optical properties of undoped ZnO films through irradiation with an UV Excimer laser. Increases in the electrical conductivity and magnetic moment have been controlled precisely with the number of laser pulses, without altering the Wurtzite crystal structure and n-type semiconducting characteristics of the films. The laser induced ferromagnetism and concomitant conductivity enhancement can be reversed through subsequent thermal annealing. Hence, we have successfully demonstrated reversible switching of RTFM in undoped ZnO by employing oxygen annealing (off) and laser irradiation (on). We discuss these findings in terms of defects and defect complexes created by pulsed laser irradiation. (C) 2010 Elsevier Ltd. All rights reserved.
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