4.4 Article

Al-doping effect on structural, transport and optical properties of ZnO films by simultaneous RF and DC magnetron sputtering

期刊

SOLID STATE COMMUNICATIONS
卷 149, 期 47-48, 页码 2177-2180

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.09.021

关键词

Al-doped ZnO films; Semiconductor-metal transition

资金

  1. National Science Council of the Republic of China [NSC 97-2112-M-168-001-MY2]

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Transparent and conductive Al-doped ZnO films have been prepared by simultaneous RF and DC magnetron sputtering. In order to study the properties of the Al-doped ZnO films, we performed Xray diffraction, X-ray absorption spectroscopy, temperature dependence of electrical resistance and Hall measurements, as well as optical transmission spectroscopy. The results revealed that all the samples were polycrystalline with a strong preferential c-axis orientation. A minimum resistivity of 7.13 x 10(-3) Omega cm was obtained, and a metallic-type conducting behavior was observed for the film at 50 W. Our present work suggests that the electrical transport property of the Al-doped ZnO films is closely related to the crystallinity. A large number of defects due to poor crystallinity and the induced stress field are able to immobilize the free carrier thereby reducing the conductivity. (C) 2009 Elsevier Ltd. All rights reserved.

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