☆ 4.4 Article

Effect of disorder on transport and electronic structure in LaCo1-xNixO3 system

SOLID STATE COMMUNICATIONS (2008)

期刊

SOLID STATE COMMUNICATIONS

卷 145, 期 5-6, 页码 293-298

出版社

PERGAMON-ELSEVIER SCIENCE LTD

DOI: 10.1016/j.ssc.2007.11.001

关键词

disorder; metal-insulator transition; Mott-Anderson transition

类别

Physics, Condensed Matter

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摘要

We have systematically investigated magnetization, resistivity, thermopower and X-ray photoemission spectra(XPS) in LaCo1-xNixO3 (0 similar to x similar to 0.5) system. It is found that the transport mechanism is variable range hopping(VRH) for x <= 0.1, and thermally activated hopping for 0.2 <= x <= 0.4. While the transport mechanism is far from the hopping process for x >= 0.4, invalidity of the hopping process for x = 0.4 and metallic behaviour for x = 0.5, indicates that the MIT is around x = 0.4. For samples (x >= 0.2), the thermopower can be explained well by Cutler-Mott formula which is suitable for metal with strong disorder. The metal-insulator transition in this system is a Mott-Anderson transition in which disorder effects dominates the MIT, in the presence of electron-electron correlations. The results indicate a two-band behaviour in LaCo1-xNixO3. We propose possible evolution of electronic structure to explain these phenomena. (C) 2007 Elsevier Ltd. All rights reserved.

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