期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 120, 期 -, 页码 500-505出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2013.09.030
关键词
CuInGaSe2; Solar cells; Surface treatment; Oxidation; Sulfurization; Selenization
资金
- Wolfson Trust
- Helmsley Trust
- Nancy and Stephen Grand Center for Sensors and Security
- GMJ Schmidt Minerva Centre for Supramolecular architecture
- Helmholtz Inst.
Conducting Probe AFM. CP-AFM, was used to follow how chemical etching, oxidation, and sulfurization affect the surface nanoscale electrical characteristics of polycrystalline Cu(In,Ga)Se-2 (CIGS) thin films. Band bending at grain boundaries (GBs) on the surface was studied and analyzed by CP-AFM - measured photocurrents. We find that both oxidation and sulfurization can passivate the GBs of the CIGS films; oxidation increases n-type band bending, which impedes the transport of photogenerated electrons, while sulfurization increases p-type band bending at GBs, which helps this transport. Differences in effects between surface terminations by sulfide, selenide and oxide were analyzed. The effects of these treatments on the electrical activity of the GBs of the films, as well as the importance of the use of chemical bath deposition of the CdS buffer, are explained within a defect surface chemistry model. (C) 2013 Elsevier B.V. All rights reserved.
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