期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 123, 期 -, 页码 166-170出版社
ELSEVIER
DOI: 10.1016/j.solmat.2014.01.006
关键词
Photovoltaics; Solar energy; Co-evaporation; Thin film solar cells; Cu(InGa)Se-2 (CIGS)
资金
- Swedish Energy Agency
The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se-2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga]+[In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature. (C) 2014 Elsevier B.V. All rights reserved.
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