期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 95, 期 2, 页码 415-418出版社
ELSEVIER
DOI: 10.1016/j.solmat.2010.10.010
关键词
Gallium-doped zinc oxide; Transparent conductive oxide; Scattering reflectance; Textured surface; Surface treatment; Thin film solar cells
资金
- National Science Council of Taiwan [NSC-99-2221-E-006-212]
This paper considers texturing of ZnO:Ga (GZO) films used as back contacts in amorphous silicon (a-Si) thin film solar cells. GZO thin films are first prepared by conventional methods. The as-deposited GZO surface properties are modified so that their use as back contacts on a-Si solar cells is enhanced. Texturing is performed by simple dry plasma etching in a CVD process chamber,at power=100 W, substrate temperature=190 degrees C (temperature is held at 190 degrees C because thin film solar cells are damaged above 200 degrees C), pressure=400 Pa and process gas H-2 flow=700 sccm. Conventional a-Si solar cells are fabricated with and without GZO back contact surface treatment. Comparison of the with/without texturing GZO films shows that plasma etching increases optical scattering reflectance and reflection haze. SEM and TEM are used to evaluate the morphological treatment-induced changes in the films. Comparison of the a-Si solar cells with/without texturing shows that the plasma treatment increases both the short-circuit current density and fill factor. Consequently, a-Si solar cell efficiency is relatively improved by 4.6%. (C) 2010 Elsevier B.V. All rights reserved.
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