4.4 Article

Potassium acceptor doping of ZnO crystals

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AIP ADVANCES
卷 5, 期 5, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4919932

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  1. Center for Materials Research at Washington State University
  2. DOE [DE-FG02-07ER46386]

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ZnO bulk single crystals were doped with potassium by diffusion at 950 degrees C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 mu m with concentration similar to 1 x 10(16) cm(-3). IR measurements show a local vibrational mode (LVM) at 3226 cm(-1), at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O-H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm(-1). The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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