4.8 Article

Ultra-Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity

期刊

SMALL
卷 14, 期 37, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201802598

关键词

flexible photodetector; high responsivity; SnTe; topological crystalline insulators; ultra-broadband

资金

  1. National Natural Science Foundation of China [11574349]
  2. Natural Science Foundation of Jiangsu Province [BK20150365, BK20170424]
  3. Key Research Program of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSW-SLH031]
  4. Hundred Talent Program of Chinese Academy of Sciences
  5. Vacuum Interconnected Nanotech Workstation (Nano-X) of Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences
  6. Australian Research Council (ARC) Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) [CE170100039]
  7. ARC Industrial Transformation Research Hub-Nanoscience Based Construction Material Manufacturing (NANOCOMM) [IH150100006]

向作者/读者索取更多资源

Topological crystalline insulators (TCIs) are predicted to be a promising candidate material for ultra-broadband photodetectors ranging from ultraviolet (UV) to terahertz (THz) due to its gapless surface state and narrow bulk bandgap. However, the low responsivity of TCIs-based photodetectors limits their further applications. In this regard, a high-performance photodetector based on SnTe, a recently developed TCI, working in a broadband wavelength range from deep UV to mid-IR with high responsivity is reported. By taking advantage of the strong light absorption and small bandgap of SnTe, photodetectors based on the as-grown SnTe crystalline nanoflakes as well as specific short channel length achieve a high responsivity (71.11 A W-1 at 254 nm, 49.03 A W-1 at 635 nm, 10.91 A W-1 at 1550 nm, and 4.17 A W-1 at 4650 nm) and an ultra-broad spectral response (254-4650 nm) simultaneously. Moreover, for the first time, a durable flexible SnTe photodetector fabricated directly on a polyethylene terephthalate film is demonstrated. These results prove the great potential of TCIs as a promising material for integrated and flexible optoelectronic devices.

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