Article
Nanoscience & Nanotechnology
Fei Qi, Qiuran Li, Wenxia Zhang, Qiang Huang, Bingyan Song, Yuanfu Chen, Jiarui He
Summary: In this study, a three-dimensional and freestanding ReS2/graphene heterostructure (3DRG) was synthesized for the first time via a one-pot hydrothermal method, which can be directly used as a freestanding and binder-free anode for lithium-ion batteries (LIBs). The 3DRG anode exhibits hierarchically sandwich-like, nanoporous, and conductive three-dimensional network constructed by two-dimensional ReS2/graphene heterostructural nanosheets. With a current density of 100 mA g-1, the 3DRG anode delivers a high reversible specific capacity of 653 mAh g-1. It also shows higher rate capability and cycling stability compared to the bare ReS2 anode.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Edgars Butanovs, Alexei Kuzmin, Sergei Piskunov, Krisjanis Smits, Aleksandr Kalinko, Boris Polyakov
Summary: The study demonstrates the growth of high-quality few-layer ReS2 using pre-deposited rhenium oxide coating on different semiconductor material nanowires, creating novel core-shell heterostructures for energy applications involving photocatalytic and electrocatalytic hydrogen evolution.
APPLIED SURFACE SCIENCE
(2021)
Review
Biochemistry & Molecular Biology
Nan Wang, Yashu Li, Lin Wang, Xuelian Yu
Summary: ReS2-based heterostructures, formed by coupling a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have demonstrated promising performance in energy conversion and environmental pollution protection. This review focuses on the preparation methods, such as hydrothermal, chemical vapor deposition, and exfoliation techniques, as well as the achievements in correlated applications of ReS2-based heterostructures, including type-I, type-II heterostructures, and Z-scheme heterostructures, for hydrogen evolution, reduction of CO2, and degradation of pollutants. We believe that this review provides an overview of the most recent advances to guide further research and development of ReS2-based heterostructures for photocatalysis.
Article
Chemistry, Multidisciplinary
Bingying You, Zheyuan Xu, Junqiang Yang, Xingxing Jiang, Yanfang Li, Gonglei Shao, Yuanyuan Jin, Haiyan Xiang, Huili Jiang, Xiaochi Liu, Jian Sun, Yexing Feng, Ying Jiang, Anlian Pan, Song Liu
Summary: Van der Waals (vdW) heterostructures, composed of atomically thin layers assembled through weak vdW forces, provide a new way to integrate materials with different properties and specific applications. This study investigates the impact of anisotropic materials on heterostructure systems and introduces isotropic materials to change the in-plane symmetry, offering a new degree of freedom for modulating their properties.
Article
Chemistry, Physical
Jiahao Yao, Haiyang Liu, Qingming He, Kai Chen, Yaping Wu, Xu Li, Chunmiao Zhang, Zhiming Wu, Junyong Kang
Summary: In this study, lateral and vertical MoS2/ReS2 heterojunctions were successfully synthesized through a two-step CVD method. The growth mode of the heterojunction transitioned from lateral epitaxy to vertical stacking under a high Re/S ratio, and two distinct interface structures were observed. Additionally, MoS2/ReS2 heterostructures exhibited reduced emission intensity compared to MoS2 monolayers due to carrier transfer, providing a robust and controllable strategy for synthesizing heterostructures with different phase structures.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Zengda Wang, Peiyu Zeng, Shuojie Hu, Xiaomei Wu, Jiaoyan He, Zhangting Wu, Wenhui Wang, Peng Zheng, Hui Zheng, Liang Zheng, Dexuan Huo, Yang Zhang
Summary: A novel ReS2/graphene/WSe2 heterostructure prepared by dry transfer demonstrates air-stable and high-performance photodetection, with specific detectivities up to 10(10) Jones and response time on the order of a millisecond. The heterostructure also exhibits polarization-sensitive photodetection and broad photoresponse from visible to infrared range, achieving a high photoresponsivity of 1.02 A W-1.
Article
Materials Science, Multidisciplinary
Renyan Wang, Muhammad Yasar, Xiang Xu, Yida Zhao, Haiming Zhu, Lin Gan
Summary: In-plane anisotropy (IPA) refers to angle-dependent properties defined by asymmetric structure, which can be introduced into isotropic materials for enhanced control of properties. Experimental results demonstrate the spread of IPA from anisotropic to isotropic materials in ultrathin heterostructures, showcasing the feasibility of extending the applications of intrinsic isotropic two-dimensional materials in angle-dependent fields.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Energy & Fuels
Yingbo Kang, Xiaotong Han, Haocheng Yuan, Bao Yu Xia, Ho Seok Park
Summary: By vertically assembling ReS2 nanosheets onto nitrogen-doped reduced graphene oxide, three-dimensional nanostructured electrocatalysts were constructed with fully exposed active sites and facilitated charge transfer. The synthesized ReS2/NRGO hybrids exhibit a relatively small Tafel slope and high diffusion-limited current density, showing great potential for practical applications in fuel cells and metal-air batteries.
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
(2021)
Article
Chemistry, Multidisciplinary
Fei Chen, Yuxin He, Teyang Zhang, Qiuran Lv, Shuduan Mao
Summary: In this study, two types of 2D MoS2/ReS2-based vertical heterostructures (HSs) were successfully fabricated by altering the Re-based precursors during a one-step chemical vapor deposition process. The interlayer excitons, interlayer coupling interaction, and charge separation were investigated through Raman-photoluminescence spectroscopy and photoresponse measurement. The possible growth mechanism of these two types of vertical HSs was discussed based on the evaporation temperature difference between the Re-based precursors and Mo foil. This study provides a feasible and controllable strategy for fabricating in-plane isotropic/anisotropic TMDC HSs with different phase structures.
Article
Chemistry, Multidisciplinary
Fei Chen, Yuxin He, Teyang Zhang, Qiuran Lv, Shuduan Mao
Summary: Vertically stacked 2D heterostructures created from in-plane isotropic/anisotropic 2D transition-metal dichalcogenides have attracted attention for their unique interlayer coupling characteristics and potential applications in advanced photodetectors. However, fabricating and understanding the behavior of interlayer excitons in such structures remain challenging. In this study, we demonstrate two types of vertical heterostructures based on 2D MoS2/ReS2 by altering the Re-based precursors during the one-step CVD process. The interlayer excitons, interlayer coupling interaction, and charge separation are investigated using Raman-photoluminescence spectroscopy and photoresponse measurements. The possible growth mechanism of these structures is discussed based on the temperature difference between Re-based precursors and Mo foil. This study provides a feasible and controllable strategy for fabricating in-plane isotropic/anisotropic TMDC heterostructures with different phase structures.
Article
Chemistry, Multidisciplinary
Zhao Liu, Bartosz Szczefanowicz, J. Marcelo J. Lopes, Ziyang Gan, Antony George, Andrey Turchanin, Roland Bennewitz
Summary: Stacked hetero-structures of 2D materials design interactions with electronic and mechanical properties. We investigate the structure, work function, and friction of 1-4 layers MoS2 grown by chemical vapor deposition on epitaxial graphene on SiC(0001). Friction is mainly controlled by adhesion, which is influenced by deformation of layers. Friction decreases with increasing layers due to decreased deformation caused by bending rigidity. Friction dependence on load and bias voltage is due to variations in interface atomic potential corrugation, enhanced by load and bias. Minimal friction is achieved when work function differences are compensated.
Article
Chemistry, Physical
Guangyuan Han, Huan Shan, Lizhi Zhang, Wenpeng Xu, Zhao-Yan Gao, Hui Guo, Geng Li, Hong-Jun Gao
Summary: Twisted graphene/silicene bilayers have been successfully constructed on Ru (0001) crystal via intercalation, providing a new pathway towards the construction of graphene-based twisted heterobilayers.
Article
Nanoscience & Nanotechnology
Leonardo Martini, Vaidotas Miseikis, David Esteban, Jon Azpeitia, Sergio Pezzini, Paolo Paletti, Michal W. Ochapski, Domenica Convertino, Mar Garcia Hernandez, Ignacio Jimenez, Camilla Coletti
Summary: In this work, high-quality graphene-hexagonal boron nitride (hBN) heterostructures were successfully obtained using scalable approaches. Continuous hBN films were grown on commercially available SiO2/Si and used as receiving substrates for graphene single-crystal matrixes. The structural, chemical, and electronic properties of the heterostructure were investigated, and graphene carrier mobilities exceeding 10,000 cm(2)/Vs were achieved in ambient conditions.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Ying Bo Kang, Xiaotong Han, Seunghoon Kim, Haocheng Yuan, Ning Ling, Hyung Chul Ham, Liming Dai, Ho Seok Park
Summary: Binary heteronanosheets composed of ultrathin ReS2 nanosheets and reduced graphene oxide (RGO) were constructed with either a two-dimensional or three-dimensional structure. The 3D ReS2/RGO heteronanosheets exhibited abundant active sites and channels for efficient electrolyte ions transport, along with excellent oxygen reduction performance due to strong affinity toward oxygen-containing intermediates. These features make them promising for applications in fuel cells and metal-air batteries.
Article
Multidisciplinary Sciences
Su-Beom Song, Sangho Yoon, So Young Kim, Sera Yang, Seung-Young Seo, Soonyoung Cha, Hyeon-Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Lee, Jun Sung Kim, Moon-Ho Jo, Jonghwan Kim
Summary: This study demonstrates DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies, while graphene electrodes efficiently collect photo-excited carriers in hBN under DUV laser illumination and external bias voltage, generating high photocurrent. Our work paves the way for efficient DUV light emitting and detection devices based on hBN.
NATURE COMMUNICATIONS
(2021)
Review
Chemistry, Multidisciplinary
Xiaochi Liu, Min Sup Choi, Euyheon Hwang, Won Jong Yoo, Jian Sun
Summary: This article discusses the impact of Fermi level pinning (FLP) in 2D semiconductor devices and its causes. The authors indicate that FLP is mainly due to inefficient doping into 2D materials, vdW gap at the metal interface, and hybridized compounds formed under contacting metals. The article further explores the effects of FLP on 2D device performance and methods for improving metallic contact to 2D materials.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Dhirendra Sahoo, Jyoti Shakya, Nasir Ali, Won Jong Yoo, Bhaskar Kaviraj
Summary: This study investigates the photocatalytic performance of MoS2 nanoflowers synthesized using a hydrothermal method for dye degradation under visible light irradiation. The ultrathin-layered nanoflowers showed faster degradation rates and good stability, indicating their potential as effective catalysts for industrial wastewater treatment.
Article
Chemistry, Multidisciplinary
Yang Liu, Song Liu, Baichang Li, Won Jong Yoo, James Hone
Summary: Robust ferroelectricity can be achieved in nonferroelectric semiconducting 2H-WSe2 by creating R-stacked bilayers with broken inversion symmetry. The phase transition order of this artificial ferroelectric heterostructure is first-order, with a measured Curie temperature of 353K. The stability of this artificial ferroelectric material is demonstrated through consecutive polarization measurements.
Review
Oncology
Bo Mi Gil, Myung Hee Chung, Ki-Nam Lee, Jung Im Jung, Won Jong Yoo, Soon Seog Kwon, Heejeong Lee
Summary: This article retrospectively reviewed three cases of primary pleural angiosarcoma, detailing the clinical presentation and imaging features. The patients were all male, of older age, presenting with dyspnea and chest pain as major complaints. Imaging findings showed unilateral masses with variable sizes, circumscribed borders, irregular low-density areas within the masses, and commonly associated pleural effusion.
Article
Materials Science, Multidisciplinary
Tien Dat Ngo, Min Sup Choi, Myeongjin Lee, Fida Ali, Won Jong Yoo
Summary: This study reports on the anomalous electrical transport behavior of edge-contacted WSe2 FETs, showing a strong Fermi-level pinning effect and consistent p-type behavior regardless of contacting metals. The presence of an oxide at the contact edge of WSe2 was found to be responsible for the Fermi-level pinning, which could be effectively removed by wet treatment for controlling carrier polarity. The findings provide new insights into the impact of edge contacts on surface sensitive 2D materials.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Nanoscience & Nanotechnology
Sungwon Lee, Hyungyu Choi, Inyong Moon, Hoseong Shin, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo
Summary: This study demonstrates that edge-contacted graphene devices of multiple stacked 2D hetero-structures with hBN exhibit superior performances in carrier transport and have lower contact resistivity compared to surface-contacted devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Myeongjin Lee, Nasir Ali, Fida Ali, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo
Summary: The study measured the in-plane electrical conductance of BP FETs in different directions using an edge contact method, finding anisotropies of approximately 5.5 and 7.5. Results showed that edge roughness scattering limited the mobility of BP FETs, while impurity scattering and phonon scattering had different effects on the mobility of BP FETs with top contact at different temperatures.
ADVANCED ELECTRONIC MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Min Sup Choi, Nasir Ali, Tien Dat Ngo, Hyungyu Choi, Byungdu Oh, Heejun Yang, Won Jong Yoo
Summary: Recent studies have focused on the potential use of 2D materials in future quantum devices. However, a major limitation occurs when 2D materials come into contact with metals, resulting in a decrease in electronic mobility. This article reviews the use of vdW-gap-free 1D edge contact as a solution to suppress carrier scattering and discusses its application in electronic, optoelectronic, and quantum devices. Challenges regarding the reliability of 1D contacts are also addressed.
ADVANCED MATERIALS
(2022)
Article
Physics, Applied
Zhongwang Wang, Xiaochi Liu, Huixia Lei, Yang Lu, Yahua Yuan, Yuanyuan Qu, Yifan Huang, Hiroshi Mizuta, Won Jong Yoo, Jian Sun
Summary: A comprehensive electrical modulation of conductance anisotropy in low-symmetry ReS2 transistors is reported. By applying a gate voltage, the polarization direction of the maximum conductance can be reversed, achieving a comprehensive modulation of conductance anisotropy. This modulation provides an additional degree of freedom for exploring functionalities in low-symmetry semiconductors.
PHYSICAL REVIEW APPLIED
(2022)
Article
Nanoscience & Nanotechnology
Fida Ali, Nasir Ali, Muhammad Taqi, Tien Dat Ngo, Myeongjin Lee, Hyungyu Choi, Won-Kyu Park, Euyheon Hwang, Won Jong Yoo
Summary: This study systematically analyzed the metal-insulator transition (MIT) occurring in WSe2 devices by varying the thickness of the WSe2. The nature of the MIT strongly depends on the WSe2 channel thickness and the strength of the localized trap density (D-t) at the interface.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Kwangro Lee, Tien Dat Ngo, Sungwon Lee, Hoseong Shin, Min Sup Choi, James Hone, Won Jong Yoo
Summary: Recently, researchers have been studying 2D materials for their unique nanoelectronic applications. Among these materials, tungsten diselenide (WSe2) has attracted significant interest due to its favorable properties. This study proposes a simple method involving oxygen plasma treatment and aging to overcome an issue called Fermi-level pinning (FLP) in WSe2 field-effect transistors (FETs). The results show a reduction in FLP and improved performance in the FETs after aging, along with changes in the metal contacts used. This work demonstrates an efficient approach to addressing FLP and modulating the performance of 2D FETs.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Nasir Ali, Myeongjin Lee, Fida Ali, Tien Dat Ngo, Hyokwang Park, Hoseong Shin, Won Jong Yoo
Summary: By tuning the carrier density controlled by back-gate bias, we observed the metal-insulator transition (MIT) in black phosphorus field effect transistors. At high carrier densities, the conductivity follows a power-law dependence on carrier density, indicating the presence of screened Coulomb impurity scattering. As the carrier density decreases, the screening of Coulomb impurity scattering breaks down, leading to strong charge density inhomogeneity and a percolation-based transition at the critical carrier density. Our findings confirm the 2D percolation-based MIT in black phosphorous devices.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Zhenping Wang, Nasir Ali, Tien Dat Ngo, Hoseong Shin, Sungwon Lee, Won Jong Yoo
Summary: High-mobility field-effect transistors (FETs) are achieved by introducing few-layer PdSe2 flakes as channels and directly depositing semimetal antimony (Sb) as drain-source electrodes. The formation of clean and defect-free van der Waals (vdW) stackings at the Sb-PdSe2 heterointerfaces boosts the transport characteristics, while the use of layered h-BN as buffer layers eliminates interfacial disorders and significantly increases electron mobility.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Dhirendra Sahoo, Shivam Tyagi, Srishti Agarwal, Jyoti Shakya, Nasir Ali, Won Jong Yoo, Bhaskar Kaviraj
Summary: This study found that Mn-doped MoS2 nanostructures exhibit exceptional visible-light-driven photocatalytic activity, with high efficiency in the degradation of organic dyes. Furthermore, the catalysts doped with Mn showed good stability even after multiple cycles of use. Therefore, these nanostructures have the potential to be used as catalysts for industrial wastewater treatment.
Article
Chemistry, Multidisciplinary
Tien Dat Ngo, Tuyen Huynh, Hanggyo Jung, Fida Ali, Jongwook Jeon, Min Sup Choi, Won Jong Yoo
Summary: Achieving low contact resistance (R-C) is a major challenge in producing 2D FETs. In this work, the electrical characteristics of semimetal and normal metal-contacted MoS2 devices are analyzed. Semimetal contacts significantly reduce R-C and have a strong dependence on top gate-voltage (V-TG), while normal metal contacts only modulate R-C by varying bottom gate-voltage (V-BG). The anomalous behavior is attributed to weak Fermi level pinning (FLP) of semimetal contacts.
