期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 197, 期 -, 页码 137-141出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2014.02.073
关键词
Triple junction (TJ) solar cell; Nanowire (NW); Humidity sensor
资金
- National Science Council [NSC 102-2221-E-492-021]
- Ministry of Economic Affairs of the Republic of China, Taiwan [103-EC-17-A-10-51-187]
This study presents a zinc oxide (ZnO) Schottky humidity sensor. This kind of sensor needs a forward voltage bias to detect electrical changes in relative humidity (RH). Authors replace the external voltage bias for the sensor with the bias from GaInP/GaAs/Ge triple junction (TJ) solar cell. In this study, two independent components, solar cell and humidity sensor, are integrated vertically to a self-biased and small-sized device. The open-voltage (V-oc) of TJ solar cell under standard solar irradiation (AM 1.5G) is about 2.5 V to bias ZnO humidity sensor. With this self-bias from TJ solar cell, measured current values of the integrated device are 75.9, 123.8, 181.2, and 222.6 mu A for 35%, 50%, 70% and 85% RH under the conditions of 25 degrees C and AM 1.5G. Moreover, ZnO nanowire (NW) structure is added on the integrated device to enhance RH response due to increasing surface-area-to-volume ratio. The measured RH responses of the device with ZnO NW at 25 degrees C were 141.2, 268.1, 365.7, and 572.5 mu A for 35, 50, 70, and 85% RH, respectively. (C) 2014 Published by Elsevier B.V.
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