4.7 Article

Synthesizing SnO2 thin films and characterizing sensing performances

期刊

SENSORS AND ACTUATORS B-CHEMICAL
卷 150, 期 1, 页码 99-104

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2010.07.036

关键词

SnO(2); Gas sensor; Thin film; Pulsed laser deposition; Electric property

资金

  1. Japan Society for the Promotion of Science (JSPS), Japan [19201019, 20246007]
  2. Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan

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SnO(2) thin films were grown on silica glass substrates using the pulsed laser deposition (PLD) method, and their structures, electric properties, and sensor performances were examined to investigate the sensing mechanism of thin-film gas sensors. Single-phase SnO(2) films with rutile-type structures were obtained at 650 degrees C. All the SnO(2) films had many columnar grains, and the grain size increased with film thickness Measurements of the Hall coefficient at room temperature revealed that the Hall mobility of the films was independent of the film thickness. In contrast, the sensing performances of the films for NO(2) and H(2) gases respectively in an air atmosphere drastically improved for film thicknesses under 100 nm These results for the film properties and sensing performances of SnO(2) thin films are discussed in terms of a space-charge layer formed on the columnar grains (C) 2010 Elsevier B V All rights reserved

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