4.7 Article

The influence of Mg doped ZnO thin films on the properties of Love wave sensors

期刊

SENSORS AND ACTUATORS B-CHEMICAL
卷 132, 期 1, 页码 290-295

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2008.01.038

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ZnO; LiNbO3; Love wave; RF sputtering; sensitivity

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The influence of Mg dopants on the crystalline structures of MZO thin films and the properties of Love wave sensors has been studied in this paper. 0-20 mol % Mg doped ZnO films with c-axis preferred orientation were deposited on the 64 degrees YX-LiNbO3 substrates by RF magnetron sputtering technique. XRD, SEM, and AFM measurements investigated characteristics of the films. The phase shift and temperature coefficient of frequency of Love wave devices in MZO/LiNbO3 Structures are presented. The appropriate addition of Mg dopant will produce a rough surface to raise the sensitivity. Besides, the effects of reflector gratings on the properties of Love wave sensors are also investigated. (C) 2008 Elsevier B.V. All rights reserved.

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