Influence of thickness and porous structure of SiC layers on the electrical properties of Pt/SiC-pSi and Pd/SiC-pSi Schottky diodes for gas sensing purposes

标题
Influence of thickness and porous structure of SiC layers on the electrical properties of Pt/SiC-pSi and Pd/SiC-pSi Schottky diodes for gas sensing purposes
作者
关键词
-
出版物
SENSORS AND ACTUATORS B-CHEMICAL
Volume 129, Issue 2, Pages 612-620
出版商
Elsevier BV
发表日期
2007-09-20
DOI
10.1016/j.snb.2007.09.039

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