4.6 Article

Enhanced Responsivity of Photodetectors Realized via Impact Ionization

期刊

SENSORS
卷 12, 期 2, 页码 1280-1287

出版社

MDPI
DOI: 10.3390/s120201280

关键词

photodetector; responsivity; impact ionization

资金

  1. National Basic Research Program of China [2011CB302006]
  2. Natural Science Foundation of China [11134009, 61177040, 11074248]
  3. Science and Technology Developing Project of Jilin Province [20111801]

向作者/读者索取更多资源

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.

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