Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H-2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 mu m on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal was investigated by annealing at different temperature in an H-2:Ar atmosphere. Annealing at 900 degrees C, etching of h-BN was observed from crystal edges with no visible etching at the center of individual crystals. While, annealing at a temperature = 950 degrees C, highly anisotropic etching was observed, where the etched areas were equilateral triangle-shaped with same orientation as that of original h-BN crystal. The etching process and well-defined triangular hole formation can be significant platform to fabricate planar heterostructure with graphene or other two-dimensional (2D) materials.