期刊
SENSOR LETTERS
卷 6, 期 5, 页码 699-704出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sl.2008.m106
关键词
Nanoporous ZnO Thin Films; Electrochemical Anodization; Surface Modification; Planar and MIM Sensors; Pd-Ag Catalytic Metal Contact; Low Operating Temperature
High purity Zn was electrochemically anodized to grow nanocrystalline and nanoporous ZnO thin film, which was subsequently surface modified by Pd using electroless chemical dipping method. Two different device configurations e.g., a planar structure and a metal-active insulator-metal (MIM) sandwich structure, both working in Schottky barrier mode were designed, fabricated and tested as a hydrogen sensor. A Pd-Ag alloy was used as catalytic electrode contact for both the planar and MIM (metal-insulator-metal) configurations. Nitrogen and synthetic air were used as carrier gases for hydrogen in separate experiments. A dynamic response of similar to 65, response time of 2.2 s and a recovery time of 21.8 s for the planar structures and the corresponding values of similar to 62, 1.8 s and similar to 14 s were recorded for the MIM structures at an optimum temperature and voltage of 50 degrees C and 0.5 V. The sensing operation for 16 h showed an excellent stability.
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