Features of impurity-photoconductivity relaxation in boron-doped silicon

标题
Features of impurity-photoconductivity relaxation in boron-doped silicon
作者
关键词
-
出版物
SEMICONDUCTORS
Volume 46, Issue 11, Pages 1387-1391
出版商
Pleiades Publishing Ltd
发表日期
2012-11-07
DOI
10.1134/s1063782612110188

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