Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3gate dielectric

标题
Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3gate dielectric
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 1, Pages 015003
出版商
IOP Publishing
发表日期
2014-12-10
DOI
10.1088/0268-1242/30/1/015003

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