Fabrication and characterization of anisotype heterojunctions n-TiN/p-CdTe

Photosensitive heterojunctions n-TiN/p-CdTe were fabricated for the first time by means of titanium nitride thin film deposition (n-type conductivity) by the reactive magnetron sputtering onto freshly etched single crystal substrates CdTe (1 1 0) of p-type conductivity. The temperature dependences of the height of the potential barrier and series resistance of the n-TiN/p-CdTe heterojunction were investigated. The dominating current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V-oc = 0.35 V, short-circuit current I-sc = 1.88 mA CM-2 and fill factor FF = 0.51 under illumination 80 mW cm (2).