Working toward high-power GaN/InGaN heterojunction bipolar transistors

标题
Working toward high-power GaN/InGaN heterojunction bipolar transistors
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 7, Pages 074025
出版商
IOP Publishing
发表日期
2013-06-21
DOI
10.1088/0268-1242/28/7/074025

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