Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

标题
Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 9, Pages 094006
出版商
IOP Publishing
发表日期
2013-08-21
DOI
10.1088/0268-1242/28/9/094006

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