The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires

标题
The influence of defect states on non-equilibrium carrier dynamics in GaN nanowires
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 25, Issue 2, Pages 024017
出版商
IOP Publishing
发表日期
2010-01-23
DOI
10.1088/0268-1242/25/2/024017

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