期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 25, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/25/9/095005
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资金
- DFG [SFB 689, AS327/2-1]
- BMBF at DLR
- MES
- RFBR
- Foundation 'Dynasty'-ICFPM
- [MD-1717.2009.2]
- Engineering and Physical Sciences Research Council [EP/F021836/1] Funding Source: researchfish
- EPSRC [EP/F021836/1] Funding Source: UKRI
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.
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