Chemical diffusion in CdTe:Cl

High-temperature in situ galvanomagnetic measurements are reported in chlorine-doped CdTe, [Cl] approximate to 4 x 10(18) cm(-3) at temperatures T = 600-700 degrees C near Cd saturation. The chemical diffusion coefficient (D) over tilde is determined by means of relaxation of electrical conductivity after a step-like change of ambient Cd pressure (P(Cd)) and approximated well by a trial function (D) over tilde (cm(2) s(-1)) = 1.5 x 10(7) exp(-2.55 eV/k(b)T)/root P(Cd)(atm). Both (D) over tilde and equilibrium conductivity are calculated on the basis of a defect model in which donors Cl(Te) are compensated by divalent acceptors Cd vacancies (V(Cd)) and monovalent acceptor complexes (Cl(Te)V(Cd)). The properties of native point defects are consistent with undoped CdTe. It is shown that (D) over tilde can be fit well assuming different diffusion coefficients for singly and doubly charged V(Cd).