Article
Chemistry, Inorganic & Nuclear
Fatemeh Parveh, Amin Yourdkhani, Reza Poursalehi
Summary: This article presents a modification of the conventional liquid phase deposition method for the single-grain deposition of alpha-Fe2O3 films. The new method, called electric-field-assisted liquid phase deposition, reduces the grain boundaries in the deposited films, resulting in higher photocurrent density. The study also confirms the inhibition of electron-hole recombination process in the single-grain films.
DALTON TRANSACTIONS
(2022)
Article
Chemistry, Physical
Navneet Bhardwaj, Bhanu B. Upadhyay, Yogendra K. Yadav, Sreenadh Surapaneni, Swaroop Ganguly, Dipankar Saha
Summary: In this study, 10 nm of amorphous Nb2O5 was successfully grown on an AlGaN/GaN heterostructure, with ideal stoichiometry and a band gap of 4.15 eV determined by XPS analysis. Additionally, TEM confirmed the thickness and crystallinity of the oxide, while AFM measured a RMS roughness of 1.32 nm. The capacitive behavior of Nb2O5 and its interface characteristics with AlGaN were estimated by CV characteristics.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Hsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi, Ching-Ting Lee
Summary: In this study, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers were grown on silicon substrates using a metalorganic chemical vapor deposition system. The double-channel planar MOSHEMTs exhibited double-hump transconductance behaviors, while the devices with multiple-mesa-fin-channel array showed better gate control capability.
Review
Chemistry, Physical
Anthony Calzolaro, Thomas Mikolajick, Andre Wachowiak
Summary: This paper reviews the current status of gate dielectric technology using aluminum oxide (Al2O3) for GaN-based devices. The focus is on the recent progress in engineering high-quality ALD-Al2O3/(Al)GaN interfaces and the performance of Al2O3-gated GaN-based MIS-HEMTs for power switching applications. Novel emerging concepts using the Al2O3-based gate dielectric technology are also introduced.
Article
Engineering, Electrical & Electronic
Sheng Zhang, Xinyu Liu, Ke Wei, Sen Huang, Xiaojuan Chen, Yichuan Zhang, Yingkui Zheng, Guoguo Liu, Tingting Yuan, Xinhua Wang, Haibo Yin, Yao Yao, Jiebin Niu
Summary: The article demonstrates a Ka-band AlGaN/GaN MIS-HEMT with SiN gate dielectric grown by PEALD, which significantly reduces gate reverse leakage current, improves breakdown voltage, and delivers high output power density and peak power-added efficiency.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee
Summary: A double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN heterostructured-MOSHEMTs with superior gate control capability and low noise power density was fabricated using laser interference photolithography and vapor cooling condensation systems.
Article
Energy & Fuels
Abdussalam M. Elbanna, Kholoud E. Salem, Mohamed Ramadan, Nageh K. Allam
Summary: In this study, a selective method for fabricating optimized nickel-doped brookite nanotube array films was reported. The films were synthesized on a fluorine-doped tin oxide substrate using ultrarapid radio frequency sputtering followed by electrochemical anodization and thermal annealing. Nickel doping improved the photocatalytic performance of the films by introducing impurity bands within the bandgap of titanium dioxide. The annealing process at different temperatures allowed for tuning of the photoactivity of the fabricated photoelectrodes, which was consistent with the nature of the trap states. Additionally, the nanotubes exhibited high crystallinity and enhanced photoresponse with a bandgap of 2.7 eV.
Article
Nanoscience & Nanotechnology
Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim, Young Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Chi-Sun Hwang, Sung-Min Yoon
Summary: The roles of oxygen interstitial defects in In-Ga-Zn-O (IGZO) thin films were investigated by controlling the cationic compositions and gate-stack process conditions. Excess oxygens were found to increase with higher In contents in the IGZO channels. Thermal annealing helped stabilize device operations and influenced negative shifts in threshold voltage.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Juwon Yun, Jeiwan Tan, Young-Kwang Jung, Wooseok Yang, Hyungsoo Lee, Sunihl Ma, Young Sun Park, Chan Uk Lee, Wenzhe Niu, Jeongyoub Lee, Kyungmin Kim, S. David Tilley, Aron Walsh, Jooho Moon
Summary: A dipole reorientation strategy is proposed to enhance the photovoltaic effect between TiO2 and p-type absorbers by inserting a PEIE layer. It is demonstrated that the orientation of PEIE dipole can be rearranged by increasing the layer thickness, resulting in an upward shift of the TiO2 band edge. By using this approach, the onset potential of TiO2-protected heterojunction photocathodes is significantly improved.
ACS ENERGY LETTERS
(2022)
Article
Chemistry, Physical
Kun Yang, Se Hyun Kim, Hyun Woo Jeong, Dong Hyun Lee, Geun Hyeong Park, Younghwan Lee, Min Hyuk Park
Summary: Ferroelectric fluorite-structured oxide thin films have unique properties such as superior scalability and compatibility with current technology. As the size of the films shrinks, the contribution of the interfacial layer becomes more important, and understanding the interface chemistry is crucial for industrial applications. This review focuses on the emerging semiconductor devices based on ferroelectric oxide thin films and discusses the impact of interface chemistry on their properties.
CHEMISTRY OF MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Yan Cheng, Jiabei He, Han Xu, Kailun Zhong, Zheyang Zheng, Jiahui Sun, Kevin J. Chen
Summary: The gate reliability of Schottky-type p-GaN gate HEMTs under AC positive gate bias stress can be prolonged with a switching drain bias, due to the drain-induced hole insufficiency in the gate stack at large V-DSQ. This mechanism suppresses electron injection from the 2DEG channel to the p-GaN gate, weakening hot-electron generation and prolonging the gate lifetime.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Ruize Sun, Xinghuan Chen, Chao Liu, Wanjun Chen, Bo Zhang
Summary: This study investigates the degradation mechanism of Schottky p-type GaN gate stack under neutron irradiation, revealing the reduction of barrier height, formation of electron and hole traps, and impact of displacement damages on gate characteristics. Measures to enhance device resistance to neutron radiation by improving heterostructure quality or increasing potential barrier height are suggested.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Jung-Hui Tsai, Jing-Shiuan Niu, Xin-Yi Huang, Wen-Chau Liu
Summary: This article compares the electrical characteristics of Al0.28Ga0.72N/AlN/GaN MOS-HEMT with a 20-nm-thick Al2O3 layer and the conventional MS-HEMT. Results show that with the insertion of the Al2O3 layer, the MOS-HEMT exhibits a 9% increase in maximum transconductance and a significant reduction of gate leakage current by about five orders of magnitude.
SCIENCE OF ADVANCED MATERIALS
(2021)
Article
Chemistry, Physical
Dibyendu Ghosh, Krishnendu Roy, Soumyajit Maitra, Praveen Kumar
Summary: Among 2D materials, asymmetric Janus structures (MoSSe, WSSe) have exciting properties, and using a magnetic field to control spin manipulation can enhance the efficiency of photo-electrochemical water splitting, while delaminated 2D-MXene (Ti3C2Tx/MoSSe/GaN) can further enhance photocurrent and product formation.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Review
Physics, Applied
Chao Yang, Shengsheng Wei, Dejun Wang
Summary: Bias temperature instability (BTI) in SiC MOS devices is mainly caused by charge trapping at the SiC/SiO2 interface and mobile ions in gate oxide. Improving BTI involves controlling charge trapping and ion movements, as well as enhancing fabrication processes such as oxidation. Reducing the impact of BTI on device performance is crucial for the reliability and lifetime of SiC MOS devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
