期刊
SCRIPTA MATERIALIA
卷 84-85, 期 -, 页码 39-42出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2014.04.015
关键词
p-Type ZnO; ZnS; Phosphorus doping; Co-sputtering
类别
资金
- National Research Foundation of Korea (NRF) - Korea Government (MSIP) [2008-0062606]
- Ministry of Trade, Industry Energy
- Korea Institute for Advancement of Technology (KIAT) [R0000499]
- National Research Foundation of Korea [2008-0062606] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on the structural and electrical properties of phosphorous-doped ZnSxO1-x films grown by radiofrequency magnetron sputtering. The band gap decreased with increasing sulfur composition in phosphorus-doped ZnSxO1-x films because of the band bowing effect. The conductivity of phosphorus-doped ZnSxO1-x films changed from n-type to p-type, and the p-type doping efficiency of phosphorus in ZnO was increased as the sulfur content in phosphorus-doped ZnSxO1-x was increased. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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