期刊
SCRIPTA MATERIALIA
卷 64, 期 7, 页码 617-620出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2010.12.002
关键词
HfB2-SiC; Oxidation; Microstructure; Transmission electron microscope
类别
资金
- Chinese Academy of Sciences
- National Natural Science Foundation of China [50632070]
- Science and Technology Commission of Shanghai [08520707800, 09ZR1435500]
The initial stage of oxidation process of HfB2-20 vol.% SiC composite at 1500 degrees C in air was investigated. With no holding, the oxide scale is composed of a discontinuous SiO2-rich glass layer and an imperfect SiC-depleted layer. Detailed analysis showed that the imperfect. SiC-depleted layer contained an HfB2 matrix with partially oxidized HfB2 and SiC particles enclosed in graphite, which revealed that the formation of the SiC-depleted layer during oxidation resulted from the active oxidation of SiC with C as an initial product. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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