期刊
SCRIPTA MATERIALIA
卷 61, 期 8, 页码 773-776出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2009.06.021
关键词
Nitrides; Dislocations; Scanning electron microscopy (SEM); Chemical vapor deposition (CVD); Electron channeling contrast imaging (ECCI)
类别
资金
- Office of Naval Research
- National Research Council
We report evidence for non-destructive determination of dislocation type and Burgers vector direction in GaN using electron channeling contrast imaging (ECCI) inside a scanning electron microscope. Forescattered electron intensity fluctuations generated by threading dislocations exhibit characteristic spatial profiles indicative of dislocation type (screw, edge) and Burgers vector direction. Simulated channeling contrast features by two-beam dynamical diffraction calculations show qualitative agreement with recorded images. Forescatter ECCI sensitivity to atomic steps and low-angle grain boundaries in GaN allow for additional confirmation. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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