期刊
RSC ADVANCES
卷 5, 期 107, 页码 87993-87997出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5ra17475a
关键词
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资金
- Natural Science Foundation of China [61404039, 51202154]
- Heilongjiang Province Foundation for Returned Chinese Scholars [LC201401]
- Educational Commission of Heilongjiang Province of China [12531Z006]
- Natural Science Foundation of Jiangsu Province [BK20131169]
- Graduate Student's Scientific Research Innovation Project of Harbin Normal University [HSDSSCX2015-01]
Amorphous InGaZnO (a-IGZO) thin films have been grown on polyethylene terephthalate (PET) substrates using a plasma-assisted pulsed laser deposition (PLD) technique, and a flexible ultraviolet (UV) photodetector (PD) with a simple metal-semiconductor-metal (MSM) structure was prepared on the a-IGZO films. The flexible PD shows relatively good photoresponse characteristics before and after bending, and retains good folding reproducibility after repeated bending up to 500 cycles. More importantly, it shows a fast speed with response and recovery times of 0.8 ms and 2.0 ms, 33.8 ms, which are much faster than that of the reported flexible ultraviolet detectors. The devices reported in this paper provide an optimal way to realize flexible ultraviolet detectors with fast speed.
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