Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells

标题
Effects of Ga doping and hollow structure on the band-structures and photovoltaic properties of SnO2 photoanode dye-sensitized solar cells
作者
关键词
-
出版物
RSC Advances
Volume 5, Issue 114, Pages 93765-93772
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-10-27
DOI
10.1039/c5ra19491a

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