期刊
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
卷 55, 期 12, 页码 2316-2325出版社
SCIENCE PRESS
DOI: 10.1007/s11433-012-4930-3
关键词
Moore's law; power dissipation; performance gain; variability; HK/MG; strain; novel device architecture
The continuous downsizing of device has sustained Moore's law in the past 40 years. As the power dissipation becomes more and more serious, a lot of emerging technologies have been adopted in the past decade to solve the short channel effect, leakage and performance degradation problems. In this paper, the emerging scaling technologies and device innovations, including high-k/metal gate, strain, ultra-shallow junction, tri-gate FinFET, extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.
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