期刊
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
卷 54, 期 3, 页码 416-419出版社
SCIENCE PRESS
DOI: 10.1007/s11433-011-4253-9
关键词
p-type and n-type graphene; electrical property; Raman property
资金
- National Natural Science Foundation of China [90923003, 10874234, 20703064, 10804015]
- Natural Science Foundation of Liaoning Province [20102039]
We obtained n-type and p-type modified graphene by mixing quantum dots and depositing electron-acceptor molecules on the surface of graphene, respectively. The electrical and optical properties of these two types of samples were measured. For n-type modified graphene, the electrons were transferred from quantum dots to graphene. The resistance of these quantum dots in modified n-type graphene is significantly smaller than that of pristine graphene. For p-type graphene, modified by electron-acceptor organic molecules of tetracyanoethylene (TCNE), electrons were transferred from graphene to TCNE molecules. The resistance of this molecular modified p-type graphene is about 10% larger than that of pristine graphene. The charge transfer effect on the optical properties of graphene was investigated with Raman spectra.
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