Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

标题
Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process
作者
关键词
-
出版物
Materials
Volume 8, Issue 4, Pages 1704-1713
出版商
MDPI AG
发表日期
2015-04-14
DOI
10.3390/ma8041704

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