Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors

标题
Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors
作者
关键词
-
出版物
Journal of Semiconductor Technology and Science
Volume 15, Issue 5, Pages 497-503
出版商
The Institute of Electronics Engineers of Korea
发表日期
2015-12-11
DOI
10.5573/jsts.2015.15.5.497

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started