Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Improvement of resistive switching in NiO-based nanowires by inserting Pt layers

(2012) Yen-Chun Huang et al.   APPLIED PHYSICS LETTERS

Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

(2011) Tung-Ming Pan et al.   APPLIED PHYSICS LETTERS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS