期刊
PROGRESS IN PHOTOVOLTAICS
卷 22, 期 4, 页码 399-404出版社
WILEY
DOI: 10.1002/pip.2476
关键词
AlGaAs; multijunction solar cell; GaInP; concentrated photovoltaics; tunnel junction
资金
- European Commission
- NEDO (EU) [283798]
- Spanish MINECO [TEC2011-28639-C02-01, TEC2012-37286, IPT-2011-1441-920000, IPT-2011-1408-420000]
- Comunidad de Madrid [NUMANCIA II S2009/ENE1477]
Tunnel junctions are key for developing multijunction solar cells (MJSC) for ultra-high concentration applications. We have developed a highly conductive, high bandgap p ( + + )-AlGaAs/n ( + + )-GaInP tunnel junction with a peak tunneling current density for as-grown and thermal annealed devices of 996 A/cm (2) and 235 A/cm (2), respectively. The J-V characteristics of the tunnel junction after thermal annealing, together with its behavior at MJSCs typical operation temperatures, indicate that this tunnel junction is a suitable candidate for ultra-high concentrator MJSC designs. The benefits of the optical transparency are also assessed for a lattice-matched GaInP/GaInAs/Ge triple junction solar cell, yielding a current density increase in the middle cell of 0.506 mA/cm (2) with respect to previous designs. Copyright (c) 2014 John Wiley & Sons, Ltd.
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