4.5 Article

Surface Patterning by Local Plasma Jet Sacrificial Oxidation of Silicon

期刊

PLASMA PROCESSES AND POLYMERS
卷 10, 期 5, 页码 416-421

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppap.201200099

关键词

plasma jet; silicon oxides; surface modification; thin films

资金

  1. German Research Council (DFG)
  2. European Union [JRP: SIB03 kNOW-REG]

向作者/读者索取更多资源

Local plasma oxidation of silicon in combination with wet chemical etching provides a method for high accuracy computer controlled surface modification and machining. In this paper we use a microwave powered atmospheric pressure Ar/He/O2 plasma jet for the local oxidation with a typical tool function width of about 1.4mm. The relationship between oxide layer thickness and plasma jet parameters is discussed in detail regarding working distance, scan velocity, and line feed rate. Surface roughness after oxidation and after chemical removal of the oxide layer was measured using an atomic force microscope. The compositional analysis and the refractive index n of the oxide layer were measured by secondary ion mass spectroscopy (SIMS) and spectroscopic ellipsometry, respectively.

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