期刊
PLASMA PROCESSES AND POLYMERS
卷 6, 期 8, 页码 512-520出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppap.200800211
关键词
dielectric constant; methylene bridges; organosilicon films; siloxane bridges; thermal stability
Thin films with low dielectric constant were deposited by PECVD from different organosilicon precursors. Film structure and properties were strongly affected by the precursor choice. Silane-based precursors resulted in films with permittivities as low as 2.3 with a limited thickness loss of 6% upon thermal annealing at 400 degrees C. Films deposited from siloxane monomers were characterized by increased thickness shrinkage of 11%. Thermal stability was correlated not only to the cross-linking degree but also to the presence of methylene bridges in the polymer backbone, which accounts for the better thermal stability of silane-based films. Substrate heating (150 degrees C) during deposition ensured the best balance between very low permittivities and good thermal stability.
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