4.8 Article

Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits

期刊

PHYSICAL REVIEW LETTERS
卷 121, 期 7, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.121.076801

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  1. Netherlands Organization of Scientific Research (NWO) VIDI program
  2. Army Research Office (ARO) [W911NF-17-1-0274]

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We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.

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