4.8 Article

Proximity Effect in Graphene-Topological-Insulator Heterostructures

期刊

PHYSICAL REVIEW LETTERS
卷 112, 期 9, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.096802

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资金

  1. ONR [ONR-N00014-13-1-0321]
  2. ACS-PRF [53581-DNI5]
  3. Jeffress Memorial Trust
  4. Virginia Space Grant Consortium

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We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity of the TI induces in graphene a strong enhancement of the spin-orbit coupling that can be tuned via the twist angle.

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