High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit

标题
High-Fidelity Preparation, Gates, Memory, and Readout of a Trapped-Ion Quantum Bit
作者
关键词
-
出版物
PHYSICAL REVIEW LETTERS
Volume 113, Issue 22, Pages -
出版商
American Physical Society (APS)
发表日期
2014-12-05
DOI
10.1103/physrevlett.113.220501

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