期刊
PHYSICAL REVIEW LETTERS
卷 112, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.112.046804
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资金
- DOE BES [DE-FG02-00-ER45841, DE-AC02-06CH11357]
- Gordon and Betty Moore Foundation [GBMF2719]
- Keck Foundation
- NSF [DMR-1305691, MRSEC DMR-0819860, DMR-1157490]
- State of Florida
- DOE
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1305691] Funding Source: National Science Foundation
We observe the fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor nu = 1/2 in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayerlike charge distributions. The nu = 1/2 FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy-and light-hole states, we find the hole nu = 1/2 FQHE to be consistent with a two-component, Halperin-Laughlin (Psi(331)) state.
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