标题
Interface-Induced Topological Insulator Transition inGaAs/Ge/GaAsQuantum Wells
作者
关键词
-
出版物
PHYSICAL REVIEW LETTERS
Volume 111, Issue 15, Pages -
出版商
American Physical Society (APS)
发表日期
2013-10-12
DOI
10.1103/physrevlett.111.156402
参考文献
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