Article
Engineering, Electrical & Electronic
Zheming Wang, Liguo Zhang, Rongkun Ji, Xiang Kan, Xuan Zhang, Yong Cai, Baoshun Zhang
Summary: Experimental results showed that increasing the implantation temperature had minor influence on the electrical activation of Si impurities in GaN, but led to a decrease in lattice strain. The average electron concentration and mobility remained relatively stable within a certain temperature range.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Applied
S. B. Kjeldby, A. Azarov, P. D. Nguyen, V. Venkatachalapathy, R. Miksova, A. Mackova, A. Kuznetsov, O. Prytz, L. Vines
Summary: Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide wafers were studied using RBS/c, XRD, and (S)TEM. The accumulation of radiation disorder was found to be accompanied by strain accumulation, resulting in crystalline-to-crystalline phase transitions. Annealing of selected samples showed complex structural transformations, which were influenced by the fluence and temperature.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Z. A. Y. Abdalla, E. G. Njoroge, M. Mlambo, S. V. Motloung, J. B. Malherbe, T. T. Hlatshwayo
Summary: Isothermal annealing studies were conducted on selenium-implanted silicon carbide at temperatures above 1200 degrees Celsius. Different implantation temperatures resulted in various effects, with isothermal annealing facilitating significant recrystallization. The migration behavior of selenium during annealing process showed significant variations.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
Article
Chemistry, Physical
Yifan Zhang, Yihan Wang, Yuan Gao, Xinwei Wang, Jianming Xue
Summary: This study doped Si atoms into single-layer graphene through ion implantation, with concentrations up to 8.9 at%, which can be accurately controlled by adjusting the ion fluence. Raman spectra revealed that the irradiation damage of graphene mainly consisted of substitutions and adsorptions, with vacancies maintained at a low level. The work function of the doped graphene increased from 4.34 to 4.46 eV with Si concentration varying from zero to 8.9 at%, showing potential in regulating the performance of related electrical applications.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Shengyuan Dong, Yanhui Xing, Chunhong Zeng, Tiwei Chen, Xuan Zhang, Binghui Wang, Jiahao Li, Leifeng Jiang, Baoshun Zhang, Zhongming Zeng
Summary: We achieved high n-type conductivity and low donor ionization energy for an AlN film grown on SiC by Si ion implantation. The conductivity at room temperature reached 0.26 omega-1 cm-1, and the donor ionization energy was only 112 meV, which is the best result for Si-implanted heteroepitaxial AlN. The lattice damage caused by ion implantation could be nearly completely repaired by annealing at 1330 degrees C for 2 h. X-ray photoelectron spectroscopy (XPS) revealed minimal presence of O impurities in the sample. The low donor ionization energy was attributed to the avoidance of introducing O impurities and mitigating the self-compensating effect. These findings demonstrate the promising potential of Si-implanted heteroepitaxial AlN for device applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Crystallography
Alan G. G. Jacobs, Boris N. N. Feigelson, Joseph A. A. Spencer, Marko J. J. Tadjer, Jennifer K. K. Hite, Karl D. D. Hobart, Travis J. J. Anderson
Summary: Selective area doping is crucial for modern devices. In this study, efficient silicon ion activation in GaN was achieved through symmetrical multicycle rapid thermal annealing. The activation efficiency and mobility improved with increasing annealing temperature. The results demonstrate efficient dopant activation with low unintentional doping, making it suitable for high-voltage, high-power devices. Additionally, high activation and mobility have been achieved with GaN on sapphire, which offers commercial potential due to its large-area and robust substrates.
Article
Materials Science, Ceramics
Chao Ye, Qing Chang, Penghui Lei, Wenhui Dong, Qing Peng
Summary: During irradiation and annealing, the phase structure of Ti3SiC2 samples underwent transformation and various defect structures, such as dislocation networks, cavities, and stacking faults, were formed. After annealing, the irradiated region reverted to its original structure. Understanding the formation processes and mechanisms of these defects can be beneficial in the design of advanced materials.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2022)
Article
Chemistry, Physical
Zhen Yang, Zhiping Zou, Zeyang Zhang, Yubo Xing, Tao Wang
Summary: In this study, structural defects in silicon implanted with helium ions at 600 degrees C and then annealed at 1000 degrees C were investigated using transmission electron microscopy. After annealing, rod-like defects decreased while tangled dislocations and large dislocation loops appeared. The shape of cavities transitioned from octahedron to tetrakaidecahedron, and stacking-fault tetrahedrons were found.
Article
Energy & Fuels
Sho Aonuki, Yudai Yamashita, Gianluca Limodio, Shunsuke Narita, Kaori Takayanagi, Ai Iwai, Kaoru Toko, Miro Zeman, Olindo Isabella, Takashi Suemasu
Summary: In this study, n-BaSi2 films were formed on p-Si substrates using ion implantation technique, and the solar-cell functionality of n-BaSi2/p-Si heterojunction was demonstrated under AM1.5 illumination. The results showed that the ion implantation damage could be recovered by postannealing, leading to high internal quantum efficiency.
PROGRESS IN PHOTOVOLTAICS
(2022)
Article
Nanoscience & Nanotechnology
Hsien-Lien Huang, Christopher Chae, Jared M. Johnson, Alexander Senckowski, Shivam Sharma, Uttam Singisetti, Man Hoi Wong, Jinwoo Hwang
Summary: The atomic scale details of the formation of point defects and their evolution to phase transformation in silicon implanted beta-Ga2O3 were investigated using high resolution scanning transmission electron microscopy (STEM). The number and size of gamma-Ga2O3 regions increased as the Si dose increased, and eventually took over the entire implanted volume when the peak Si concentration reached a certain level. Annealing disintegrated the gamma-Ga2O3 phase and returned the structure to a defect-free, single crystal beta phase. However, when the structure was completely transformed to gamma-Ga2O3, post-annealing resulted in a high concentration of dislocations within the beta phase.
Article
Materials Science, Multidisciplinary
Xiaohua Zhu, Siyi Chan, Xiaolu Yuan, Juping Tu, Siwu Shao, Yuwei Jia, Liangxian Chen, Junjun Wei, Jinlong Liu, Hiroshi Kawarada, Chengming Li
Summary: In this work, thin, high-quality, and freestanding large-area single crystal and polycrystalline diamond films were successfully prepared by high-energy C+ implantation and annealing. The damaged layer could be removed by electrochemical solution, leaving a low roughness substrate surface for direct epitaxial growth.
DIAMOND AND RELATED MATERIALS
(2022)
Article
Instruments & Instrumentation
Wenhui Dong, Qiang Shen, Mingyan Wei, Penghui Lei, Lin Song, Qing Chang, Chao Ye
Summary: Implantation experiments were conducted on single-crystal 6H-SiC samples using 6 MeV Si ions and 400 keV H ions, and the evolutions of surface damage and internal microstructure were characterized using SEM and TEM. Bumps were observed on the surface of Si+ irradiated samples after annealing, while circular bubbles appeared on the surface of H+ irradiated samples. The internal damage caused by irradiation recovered well after annealing, and the morphology and distribution of bubbles and spalling on the Si+-H+ dual ion beam irradiated sample surface were more irregular due to the more severe damage induced by pre-implanted Si ions.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2023)
Article
Chemistry, Analytical
Xingshi Yu, Xia Chen, Milan M. Milosevic, Weihong Shen, Rob Topley, Bigeng Chen, Xingzhao Yan, Wei Cao, David J. Thomson, Shinichi Saito, Anna C. Peacock, Otto L. Muskens, Graham T. Reed
Summary: GER amplifier and annealing process can change the optical properties of silicon, enabling flexible testing and post-fabrication trimming of silicon photonics devices, reducing production costs and increasing yield.
Article
Materials Science, Multidisciplinary
Qian Li, Heng Yuan, Mengdi Zhang, Weiqing Yan, Bin Liao, Xu Zhang, Minju Ying
Summary: The annealing effect on Er-implanted ZnO films under different conditions were systematically studied, showing that vacuum annealing significantly enhances the magnetization of the films and is correlated with an increase in oxygen vacancy concentration. The research provides clear evidence of the relationship between the enhancement of ferromagnetism and the increase of oxygen vacancies in Er-doped ZnO.
Article
Physics, Applied
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Kazunari Kurita
Summary: In this study, the recrystallization process of discrete amorphous regions formed on a silicon surface implanted with C3H5 molecular ions was investigated. It was found that the recrystallization occurred three-dimensionally, and the activation energy was estimated.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Multidisciplinary
Peyman Saidi, Hadi Pirgazi, Mehdi Sanjari, Saeed Tamimi, Mohsen Mohammadi, Laurent K. Beland, Mark R. Daymond, Isaac Tamblyn
Summary: Efficient and precise plasticity prediction relies on appropriate data preparation and a well-designed model. This study introduces an unsupervised machine learning-based data preparation method to maximize the trainability of crystal orientation evolution data during deformation, achieving improved test scores and reduced training iterations. The approach shows reasonable agreement between the surrogate model and experimental data, laying a foundation for further data-driven studies in texture evolution prediction.
COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING
(2022)
Article
Materials Science, Multidisciplinary
Antoine Jay, Miha Gunde, Nicolas Salles, Matic Poberznik, Layla Martin-Samos, Nicolas Richard, Stefano de Gironcoli, Normand Mousseau, Anne Hemeryck
Summary: The Activation-Relaxation Technique (ARTn) is an efficient method for exploring the energy landscape and chemical reactions associated with complex mechanisms. This paper details significant improvements to the algorithm, reducing computational costs and making it particularly effective when combined with ab initio description.
COMPUTATIONAL MATERIALS SCIENCE
(2022)
Article
Physics, Applied
M. Granata, A. Amato, M. Bischi, M. Bazzan, G. Cagnoli, M. Canepa, M. Chicoine, A. Di Michele, G. Favaro, D. Forest, G. M. Guidi, G. Maggioni, F. Martelli, M. Menotta, M. Montani, F. Piergiovanni, F. Schiettekatte
Summary: Brownian thermal noise associated with highly reflective coatings is a fundamental limit for precision experiments, including gravitational-wave detectors. Research is ongoing to find low thermal noise coatings that also meet strict optical requirements. Ion-beam-sputtered magnesium fluoride thin films are studied for their optical and mechanical properties and their potential application in current and future gravitational-wave detectors is discussed.
PHYSICAL REVIEW APPLIED
(2022)
Article
Materials Science, Multidisciplinary
Alecsandre Sauve-Lacoursiere, Simon Gelin, Gilles Adjanor, Christophe Domain, Normand Mousseau
Summary: Traditionally, the diffusion rates of point defects are believed to be mainly influenced by energy barriers. However, in disordered environments, the entropic variations between local minima and activated states become increasingly important. The unexpectedly slower defect diffusion observed in high entropy alloys has prompted researchers to revisit the role of pre-factors.
Article
Materials Science, Multidisciplinary
Oscar A. Restrepo, Oscar Arnache, J. Restrepo, Charlotte S. Becquart, Normand Mousseau
Summary: Accurate empirical potentials for magnetite and nickel-ferrite spinel systems are crucial for understanding their structural stability. Comparisons of different potentials show that MEAM predicts static properties well at zero temperature, while Buckingham types offer more stability under high temperature or pressure.
COMPUTATIONAL MATERIALS SCIENCE
(2022)
Article
Physics, Condensed Matter
Oscar A. Restrepo, Oscar Arnache, Johans Restrepo, Charlotte S. Becquart, Normand Mousseau
Summary: Using Buckingham potentials, the mechanical properties of zinc spinel ferrites were studied and the effects of pressure and randomness of Ze and Fe on their properties were analyzed. It was found that pressure affects the deformations and brittleness of the materials, and partial inverse spinels exhibit better ductility. The randomness of Ze and Fe plays an important role in the formation and stability of vacancies in the inverse spinel.
SOLID STATE COMMUNICATIONS
(2022)
Article
Automation & Control Systems
Yezhou Ni, Robert Topham, Travis Skippon, Jun-Tian Zhang, Sean Hanlon, Fei Long, Catalina Anghel, Edmanuel Torres, Mark R. Daymond, Laurent K. Beland
Summary: Zirconium alloys are widely used in nuclear power applications, but hydrogen ingress can form brittle Zr hydrides in the alloy. To study this behavior, TEM is used to image hydrides in Zr-alloys, but the analysis of these micrographs is complex and time-consuming. In this study, a Mask R-CNN was employed to automate the identification and annotation of hydrides. With limited training data and transfer learning, the Mask R-CNN accurately and quickly labeled hydrides in TEM images of pressure tube material.
ENGINEERING APPLICATIONS OF ARTIFICIAL INTELLIGENCE
(2023)
Article
Chemistry, Physical
Aravinthen Rajkumar, Peter Brommer, Lukasz Figiel
Summary: A node-density biased Monte Carlo methodology is proposed for the molecular structure generation of complex block copolymers. Within this methodology, block copolymers are represented as bead-spring models and a density field is calculated using self-consistent field theory. The generation process is modified taking the global structure of the polymer into account. The resulting configurations are shown to be suitable for molecular dynamics simulations of a wider variety of materials.
Article
Materials Science, Multidisciplinary
Carl Levesque, Sjoerd Roorda, Francois Schiettekatte, Normand Mousseau
Summary: By using ARTN technique, this study identifies two types of TLSs in the a-Si model, which are closely related to the preparation schedule of a-Si. The mechanical loss in amorphous silicon is calculated to be 10(-3) at room temperature and 10(-4) at 150 K in some configurations.
PHYSICAL REVIEW MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Itai Keren, Alon Gutfreund, Avia Noah, Nofar Fridman, Angelo Di Bernardo, Hadar Steinberg, Yonathan Anahory
Summary: The positions of Abrikosov vortices are considered as a means to encode classical information. In this study, we demonstrate the control of vortices using Nb loops patterned below a NbSe2 layer. Our results show the precise localization of vortices and the ability to push and pull them between adjacent loops. This opens up possibilities for integrating vortices in future quantum circuitry and exploring topological quantum computing.
Article
Materials Science, Multidisciplinary
Chalisa Gier, Marwa Ben Yaala, Callum Wiseman, Sean MacFoy, Martin Chicoine, Francois Schiettekatte, James Hough, Sheila Rowan, Iain Martin, Peter MacKay, Stuart Reid
Summary: The effects of reactive and sputtering oxygen partial pressure on the structure, stoichiometry, and optical properties of HfO2 thin films were systematically investigated. The amorphous structure of the films was determined by X-ray Diffraction, and the composition and stoichiometry were analyzed by Energy-dispersive X-ray Spectroscopy and Rutherford Backscattering Spectrometry. The optical properties, including refractive index and bandgap energy, were found to vary by controlling the mixture of reactive and sputtering gas.
Article
Chemistry, Multidisciplinary
Yishay Zur, Avia Noah, Carla Boix-Constant, Samuel Manas-Valero, Nofar Fridman, Ricardo Rama-Eiroa, Martin E. Huber, Elton J. G. Santos, Eugenio Coronado, Yonathan Anahory
Summary: This work demonstrates direct magnetic imaging of CrSBr flakes using nano-SQUID-on-tip (SOT) microscopy. It is found that the ferromagnetic order and the antiferromagnetic coupling are preserved down to the monolayer. Additionally, spin reorientation and the formation of Neel magnetic domain walls are observed even in the single-layer limit. This highlights the remarkable stability of CrSBr in the 2D limit.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Eugene Sanscartier, Felix Saint-Denis, Karl-Etienne Bolduc, Normand Mousseau
Summary: In recent years, there has been a lot of effort put into developing general machine-learning potentials for describing various structures and interactions. However, as the focus shifts to more complex materials, it becomes increasingly expensive to provide reliable descriptions for all possible environments. In this study, we compare the benefits of using specific potentials versus general potentials for studying activated mechanisms in solid-state materials. We found that a targeted on-the-fly approach integrated into the activation-relaxation technique nouveau (ARTn) generates the highest precision while remaining cost-effective.
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Avia Noah, Filip Toric, Tomer D. Feld, Gilad Zissman, Alon Gutfreund, Dor Tsruya, T. R. Devidas, Hen Alpern, Atzmon Vakahi, Hadar Steinberg, Martin E. Huber, James G. Analytis, Snir Gazit, Ella Lachman, Yonathan Anahory
Summary: Exchange bias phenomenon is observed in the topological Weyl semimetal Co3Sn2S2, where magnetic interfaces associated with domain walls bias the entire ferromagnetic bulk. Data suggests the presence of a hidden order parameter that can be independently tuned by applied magnetic fields. In micron-sized samples, the absence of domain walls leads to the vanishing of exchange bias, suggesting the boundaries are a source of pinned uncompensated moment arising from the hidden order.
