期刊
PHYSICAL REVIEW LETTERS
卷 110, 期 9, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.110.096603
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资金
- MEXT in Japan [2245032, 236860050]
- Grants-in-Aid for Scientific Research [22245001, 22245032] Funding Source: KAKEN
Anomalous pressure dependent conductivity is revealed for heteroacene organic field-effect transistors of dinaphtho[2, 3-b:2', 30-f] thieno[3, 2-b] thiophene single crystals in the direction of a and b crystallographic axes. In contrast to the normal characteristics of a monotonic increase in mobility mu with the application of external hydrostatic pressure P in conductors, we found that the present organic semiconductor devices exhibit nonmonotonic and gigantic pressure dependence including an even negative pressure coefficient d mu/dP. In combination with a structural analysis based on x-ray diffraction experiments under pressure, it is suggested that on-site molecular orientation and displacement peculiar in heteroacene molecules are responsible for the anomalous pressure effect. DOI: 10.1103/PhysRevLett.110.096603
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